MBE Growth Engineer ( Molecular Beam Epitaxy ) - Princeton, NJ

Description
We are seeking a semiconductor growth engineer. The engineer will primarily be responsible for handle MBE growths independently and characterizing InP epitaxy.

Activities:

*** Handling fragile InP wafers.

*** Work in class 1000 clean room environment.

*** InP epitaxy characterization, including photoluminescence, x-ray diffraction, and microscope.

*** Molecular beam epitaxy growths, including loading wafer, transferring between ultra-high vacuum chambers and editing growth recipes.

*** Production database input, growth data collection and analysis.

*** Routine equipment maintenance.

Requirements:

*** Bachelor or above in Physics or semiconductor related Engineering.

*** Ultra-high vacuum experience is desirable.

Join a growing company, working to become the leader in its channel in North America. Offering competitive salary and benefits, individual and company performance bonuses and the opportunity to grow as a key member of the company. We are looking for a great person to join the team.

For complete details contact
James A. Lockley, LT USN (Ret) at:
(609) 584-9000 ext 278

Or submit resume online at:
http://dmc9.com/jal/app.asp

Or email to:
1000026540_10007183@jobbank301.com

Please reference #37210189 when responding.
Years of Experience
5+ years
Location
New Jersey
Low Salary
$80,000.00
High Salary
$120,000.00
Job Contact
James Lockley
Job Contact Phone
(609) 584 9000 ext 278
Job Contact Email
1000026540_10007183@jobbank301.com
Apply Online
http://dmc9.com/jal/app.asp
City
Zip
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